FDMS7676 Fairchild Semiconductor, FDMS7676 Datasheet - Page 2

• Manufacturer Part Number: FDMS7676
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS7676

• Input Capacitance (ciss) @ Vds: 2960pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.4 mOhms
• Forward Transconductance Gfs (max / Min): 64 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 28 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 4 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7676 Rev. A
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3. E
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
t
t
S
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
a
b
rr
DS(on)
FS
the user's board design.
BV
GS(th)
SD
iss
oss
rss
g
g
g
gs
gd
rr
rr
V
Symbol
AS
DSS
T
T
JA
GS(th)
DSS
J
J
of 72 mJ is based on starting T
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Softness (t
Reverse Recovery Time
Reverse Recovery Charge
b
/t
a
)
J
= 25
Parameter
°
C, L = 1 mH, I
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
a. 50 °C/W when mounted on a
AS
1 in
= 12 A, V
2
pad of 2 oz copper.
DD
= 27 V, V
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
I
V
V
D
F
F
D
D
DD
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
GS
DS
GS
= 19 A, di/dt = 100 A/ s
= 19 A, di/dt = 300 A/ s
= 250 A, referenced to 25 °C
= 250 A, V
= 250 A, referenced to 25 °C
GS
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
= 10 V. 100% test at L = 0.3 mH, I
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
= 2.1 A
= 19 A
D
= 19 A
GS
GEN
GS
DS
= 250 A
GS
= 19 A,
= 19 A
= 19 A, T
= 15 A
= 0 V,
= 0 V
= 0 V
= 0 V
= 6
V
I
D
DD
= 19 A
= 15 V,
J
= 125 °C
(Note 2)
(Note 2)
JC
AS
is guaranteed by design while R
= 17 A.
1.25
Min
b. 125 °C/W when mounted on a
30
minimum pad of 2 oz copper.
2225
685
7.6
3.7
0.7
0.8
1.1
0.7
Typ
2.0
3.8
5.4
90
13
25
31
14
32
14
15
17
26
25
5.2
64
-7
5
4
15
2960
0.95
Max
910
130
7.5
1.5
1.1
100
3.0
5.5
7.6
23
10
40
10
44
19
51
24
42
40
CA
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
Units
m
nC
nC
nC
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nA
ns
ns
V
V
S
V
A