FDD10N20LZTM Fairchild Semiconductor, FDD10N20LZTM Datasheet - Page 5

• Manufacturer Part Number: FDD10N20LZTM
• Description: MOSFET N-CH 200V 7.6A DPAK-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD10N20LZTM

• Input Capacitance (ciss) @ Vds: 585pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD10N20LZ Rev. A
www.fairchildsemi.com
5