FDMC6679AZ Fairchild Semiconductor, FDMC6679AZ Datasheet - Page 4

• Manufacturer Part Number: FDMC6679AZ
• Description: MOSFET P-CH 30V POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC6679AZ

• Input Capacitance (ciss) @ Vds: 3970pF @ 15V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1
Typical Characteristics
0.01
10
0.1
Figure 7.
70
10
8
6
4
2
0
50
0.001
1
1
0.01
0
I
D
Figure 9.
Figure 11. Forward Bias Safe
= -11.5 A
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
10
J
A
T
θ
JA
J
= MAX RATED
= 25
Switching Capability
V
= 125
0.01
-V
= 125
DD
Gate Charge Characteristics
DS
0.1
t
Operating Area
o
= -10 V
Q
AV
, DRAIN to SOURCE VOLTAGE (V)
V
Unclamped Inductive
C
20
g
o
DD
, TIME IN AVALANCHE (ms)
, GATE CHARGE (nC)
C
o
C/W
= -15 V
DS(on)
0.1
30
1
40
T
T
J
J
= 25
V
1
= 25 °C unless otherwise noted
DD
= -20 V
o
50
C
T
10
J
= 100
10
60
o
100 ms
C
10 ms
10 s
1 ms
DC
1 s
70
100
100
4
10000
1000
10
10
10
10
10
10
10
100
Figure 10.
60
50
40
30
20
10
0
-2
-3
-4
-5
-6
-7
-8
0.1
25
0
Limited by Package
Figure 8.
R
V
Current vs Case Temperature
f = 1 MHz
V
θ
GS
JC
GS
= 0 V
= 3.0
Figure 12.
= 0 V
5
-V
50
-V
Maximum Continuous Drain
DS
to Source Voltage
o
C/W
GS ,
T
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
V
C
10
,
GS
GATE TO SOURCE VOLTAGE (V)
CASE TEMPERATURE (
= -4.5 V
T
J
= 125
75
1
Igss vs Vgss
15
o
C
20
100
V
GS
25
o
C )
T
= -10 V
125
J
www.fairchildsemi.com
10
= 25
C
C
C
iss
30
oss
rss
o
C
30
150
35