FDMC6679AZ Fairchild Semiconductor, FDMC6679AZ Datasheet

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FDMC6679AZ

Manufacturer Part Number
FDMC6679AZ
Description
MOSFET P-CH 30V POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC6679AZ

Input Capacitance (ciss) @ Vds
3970pF @ 15V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
91nC @ 10V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
6-MLP, Power33
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC6679AZ
P-Channel PowerTrench
-30 V, -20 A, 10 mΩ
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
θJC
θJA
, T
Max r
Max r
HBM ESD protection level of 8 kV typical(note 3)
Extended V
High performance trench technology for extremely low r
High power and current handling capability
Termination is Lead-free and RoHS Compliant
Symbol
Device Marking
STG
FDMC6679AZ
DS(on)
DS(on)
GSS
= 10 mΩ at V
= 18 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
range (-25 V) for battery applications
Top
MLP 3.3x3.3
GS
GS
FDMC6679AZ
= -10 V, I
= -4.5 V, I
-Continuous (Silicon limited)
-Continuous
-Pulsed
Device
D
D
Pin 1
= -11.5 A
= -8.5 A
T
®
A
= 25 °C unless otherwise noted
S
MOSFET
Parameter
S
S
G
MLP 3.3x3.3
Bottom
Package
DS(on)
1
D
T
T
T
T
T
C
C
C
A
General Description
The FDMC6679AZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
Applications
A
D
DS(on)
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
D
D
and ESD protection.
Reel Size
13 ’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
8
5
6
7
Tape Width
12 mm
-55 to +150
Ratings
-11.5
±25
-30
-20
-51
-32
2.3
41
53
3
www.fairchildsemi.com
4
3
3000 units
1
2
Quantity
July 2009
G
S
S
S
Units
°C/W
°C
W
V
V
A

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FDMC6679AZ Summary of contents

Page 1

... Device FDMC6679AZ FDMC6679AZ ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev.D1 ® MOSFET General Description The FDMC6679AZ has been designed to minimize losses in = -11 load switch applications. Advancements in both silicon and = -8.5 A package technologies have been combined to offer the lowest D r and ESD protection. ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2 The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev. °C unless otherwise noted J Test Conditions = -250 µ ...

Page 3

... T J Figure 3. Normalized On Resistance vs Junction Temperature 32 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev. °C unless otherwise noted µ 100 125 150 0 - 0.01 0.001 PULSE DURATION = DUTY CYCLE = 0.5% MAX ...

Page 4

... Switching Capability THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev. °C unless otherwise noted J 10000 1000 100 100 100 Figure 10 ...

Page 5

... SINGLE PULSE 125 C/W θ JA 0.001 - Figure 14. ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev. °C unless otherwise noted PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation - RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve 5 100 1000 10 P ...

Page 6

... A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILE NAME : MLP08XREVA E. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev.D1 3. 3.30 0.10 C TOP VIEW 2X (0.203) SIDE VIEW 2 ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMC6679AZ Rev.D1 FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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