PSMN7R0-60YS,115 NXP Semiconductors, PSMN7R0-60YS,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN7R0-60YS,115
• Description: MOSFET N-CH 60V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS,115

• Input Capacitance (ciss) @ Vds: 2712pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 89A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.3 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 63 A
• Power Dissipation: 117 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5596-2

NXP Semiconductors
PSMN7R0-60YS_2
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
100
80
60
40
20
5
4
3
2
1
0
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
0
10
0.5
6.5
0
6 5.5
60
1
max
min
typ
120
1.5
V
GS
5
All information provided in this document is subject to legal disclaimers.
003aae056
V
003aad280
T
(V) = 4.5
j
DS
(°C)
(V)
4.8
4.6
180
Rev. 02 — 30 March 2010
2
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
gate-source voltage
-60
factor as a function of junction temperature.
0
0
2
PSMN7R0-60YS
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad696
T
j
(V)
(°C)
03aa35
180
6
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