PSMN7R0-30MLC,115 NXP Semiconductors, PSMN7R0-30MLC,115 Datasheet

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PSMN7R0-30MLC,115

Manufacturer Part Number
PSMN7R0-30MLC,115
Description
MOSFET N-channel MOSFET logic level LFPAK33
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN7R0-30MLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
2.15 V
Continuous Drain Current
67 A
Resistance Drain-source Rds (on)
9 mOhms
Mounting Style
SMD/SMT
Package / Case
LFPAK33
Power Dissipation
57 W
Factory Pack Quantity
1500
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
D
j
DS
tot
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN7R0-30MLC
N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using
NextPower Technology
Rev. 4 — 15 June 2012
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
DC-to-DC converters
Load switching
Conditions
T
T
T
V
see
V
see
V
see
V
see
j
mb
mb
GS
GS
GS
GS
= 25 °C
Figure 10
Figure 10
Figure
Figure
= 25 °C; V
= 25 °C; see
= 4.5 V; I
= 10 V; I
= 4.5 V; I
= 4.5 V; I
12; see
12; see
D
D
D
D
GS
= 15 A; T
= 15 A; T
= 15 A; V
= 15 A; V
Figure 2
= 10 V; see
Figure 13
Figure 13
j
j
DS
DS
= 25 °C;
= 25 °C;
= 15 V;
= 15 V;
Figure 1
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
Synchronous buck regulator
Min
-
-
-
-55
-
-
-
-
Product data sheet
Typ
-
-
-
-
7.8
6.05
2
8.2
Max
30
67
57
175
9
7
-
-
°C
mΩ
Unit
V
A
W
mΩ
nC
nC

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