PSMN7R0-60YS,115 NXP Semiconductors, PSMN7R0-60YS,115 Datasheet - Page 12

• Manufacturer Part Number: PSMN7R0-60YS,115
• Description: MOSFET N-CH 60V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS,115

• Input Capacitance (ciss) @ Vds: 2712pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 89A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.3 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 63 A
• Power Dissipation: 117 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5596-2

NXP Semiconductors
8. Revision history
Table 7.
PSMN7R0-60YS_2
Product data sheet
Document ID
PSMN7R0-60YS_2
Modifications:
PSMN7R0-60YS_1
Revision history
20100330
20100112
Release date
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 02 — 30 March 2010
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
Change notice
-
-
PSMN7R0-60YS
Supersedes
PSMN7R0-60YS_1
-
© NXP B.V. 2010. All rights reserved.
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