PSMN7R0-60YS NXP Semiconductors, PSMN7R0-60YS Datasheet
PSMN7R0-60YS
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PSMN7R0-60YS Summary of contents
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... PSMN7R0-60YS N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET Rev. 02 — 30 March 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... on-state resistance T = 100 °C; see °C; see j Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS Min Typ = Figure 4.95 D Figure 13 Graphic symbol mb G mbb076 © NXP B.V. 2010. All rights reserved. ...
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... ° 89 j(init Ω; unclamped R GS 003aae053 120 P der (%) 80 40 150 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS Min - - - Figure -55 - ≤ sup 100 150 Normalized total power dissipation as a function of mounting base temperature © ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN7R0-60YS_2 Product data sheet N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET / All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS 003aae054 =10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN7R0-60YS_2 Product data sheet N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS Min Typ Max - 0.54 1.28 003aae093 t p δ ...
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... V; see Figure 14 and MHz see Figure 16 = 0.5 Ω 4.7 Ω R G(ext °C; see /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS Min Typ Figure Figure Figure 0. Figure 12 - 9.3 Figure Figure 13 - 4.95 - 0.65 Figure 37.6 ...
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... C 15 iss 10 C rss (V) GS Fig 8. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS 003aae057 = 175 ° ° 003aae062 © NXP B.V. 2010. All rights reserved. ...
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... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS min typ max 003aad696 0 60 120 © NXP B.V. 2010. All rights reserved. ...
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... N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET 003aae061 5 100 I (A) D Fig 14. Gate charge waveform definitions 003aae063 (pF 30V (nC) G Fig 16. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS GS(pl) V GS(th GS1 GS2 G(tot ...
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... PSMN7R0-60YS_2 Product data sheet N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS 003aae064 = 25 °C j 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS Supersedes PSMN7R0-60YS_1 - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 March 2010 PSMN7R0-60YS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 30 March 2010 Document identifier: PSMN7R0-60YS_2 ...