PSMN7R0-40LS,115 NXP Semiconductors, PSMN7R0-40LS,115 Datasheet
PSMN7R0-40LS,115
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PSMN7R0-40LS,115 Summary of contents
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PSMN5R8-40YS N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Rev. 03 — 25 October 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for ...
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... NXP Semiconductors Table 1. Symbol Dynamic characteristics G(tot) Avalanche ruggedness E DS(AL)S 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name PSMN5R8-40YS ...
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... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...
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... NXP Semiconductors ( Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN5R8-40YS Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base 1 Z th(j-mb) δ = 0.5 (K/W) 0 0.2 0.05 0.02 single shot - Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN5R8-40YS Product data sheet N-channel LFPAK 40 V 5.7 mΩ ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance R internal gate resistance (AC) G Dynamic characteristics Q total gate charge G(tot) Q gate-source charge ...
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... NXP Semiconductors Table 6. Characteristics …continued Symbol Parameter Source-drain diode V source-drain voltage SD t reverse recovery time rr Q recovered charge r 100 6 ( 0.5 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 100 Fig 7. Forward transconductance as a function of drain current; typical values ...
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... NXP Semiconductors 25 R DSon (mΩ Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values. − (A) min −2 10 −3 10 −4 10 −5 10 − Fig 11. Sub-threshold drain current as a function of gate-source voltage PSMN5R8-40YS Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET ...
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... NXP Semiconductors 25 V ( DSon (mΩ Fig 13. Drain-source on-state resistance as a function of drain current; typical values (V) 20V Fig 15. Gate-source voltage as a function of gate charge; typical values PSMN5R8-40YS Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET 003aae228 6 6 100 ...
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... NXP Semiconductors Fig 17. Source current as a function of source-drain voltage; typical values PSMN5R8-40YS Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 ...
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... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads DIMENSIONS (mm are the original dimensions UNIT A b 1.20 0.15 1.10 0.50 mm 0.25 1.01 0.00 0.95 0.35 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION IEC SOT669 Fig 18 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN5R8-40YS v.3 20101025 • Modifications: Status changed from objective to product. • Various changes to content. PSMN5R8-40YS v.2 20100526 PSMN5R8-40YS Product data sheet N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET Data sheet status ...
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... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 9 Legal information .13 9.1 Data sheet status ...