PSMN7R0-60YS,115 NXP Semiconductors, PSMN7R0-60YS,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN7R0-60YS,115
• Description: MOSFET N-CH 60V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS,115

• Input Capacitance (ciss) @ Vds: 2712pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 89A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.3 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 63 A
• Power Dissipation: 117 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5596-2

NXP Semiconductors
PSMN7R0-60YS_2
Product data sheet
Fig 3.
(A)
10
I
10
D
10
10
-1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DSon
= V
DS
/ I
1
D
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
DC
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
10
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
10
PSMN7R0-60YS
2
V
DS
(V)
© NXP B.V. 2010. All rights reserved.
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