PSMN7R0-60YS,115 NXP Semiconductors, PSMN7R0-60YS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-60YS,115
• Description: MOSFET N-CH 60V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS,115

• Input Capacitance (ciss) @ Vds: 2712pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 89A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.3 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 63 A
• Power Dissipation: 117 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5596-2

NXP Semiconductors
PSMN7R0-60YS_2
Product data sheet
Fig 5.
Fig 7.
(S)
(pF)
g
5000
4000
3000
2000
1000
fs
C
100
80
60
40
20
0
0
drain current; typical values
as a function of drain-source voltage; typical
values
Forward transconductance as a function of
Input, output and reverse transfer capacitances
0
0
2.5
20
40
5
60
7.5
All information provided in this document is subject to legal disclaimers.
003aae058
003aae059
V
I
GS
D
(A)
(V)
C
C
rss
iss
80
10
Rev. 02 — 30 March 2010
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
Fig 6.
Fig 8.
R
(mΩ)
(A)
DSon
I
D
20
15
10
80
60
40
20
5
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
5
2
PSMN7R0-60YS
T
j
= 175 °C
10
4
T
15
j
= 25 °C
© NXP B.V. 2010. All rights reserved.
V
GS
V
003aae057
003aae062
GS
(V)
(V)
20
6
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