FOD3184 Fairchild Semiconductor, FOD3184 Datasheet - Page 6

• Manufacturer Part Number: FOD3184
• Description: MOSFET & Power Driver ICs 3A High Speed MOSFET Gate Driver Opto
• Manufacturer: Fairchild Semiconductor
• Type: High Speed MOSFET/IGBT Gate Driver Optocouplerr

Specifications of FOD3184

• Product: MOSFET Gate Drivers
• Rise Time: 27 ns
• Fall Time: 20 ns
• Propagation Delay Time: 145 ns
• Supply Voltage (max): 35 V
• Supply Voltage (min): - 0.5 V
• Supply Current: 25 mA
• Maximum Power Dissipation: 295 mW
• Maximum Operating Temperature: + 100 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 0.3 us
• Maximum Turn-on Delay Time: 2 us
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Number Of Outputs: 2
• Output Current: 3 A
• Output Voltage: 30 V
• Package / Case: DIP-8
• Number Of Elements: 1
• Input Type: DC
• Output Type: Push-Pull
• Forward Voltage: 1.8V
• Forward Current: 25mA
• Isolation Voltage: 5000Vrms
• Operating Temp Range: -40C to 100C
• Power Dissipation: 295mW
• Pin Count: 8
• Mounting: Through Hole
• Reverse Breakdown Voltage: 5V
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
Switching Characteristics
Apply over all recommended conditions, typical value is measured at V
unless otherwise specified.
*Typical values at T
Isolation Characteristics
*Typical values at T
(t
Symbol
t
PHL
Symbol
t
UVLO OFF
UVLO ON
V
| CM
R
C
| CM
ISO
P
t
t
P
I-O
I-O
PLH
PHL
WD
– t
DD
t
t
r
f
H
L
PLH
|
|
Parameter
Withstand Isolation Voltage
Resistance (input to output)
Capacitance (input to output)
)
Parameter
Propagation Delay Time to High Output Level
Propagation Delay Time to Low Output Level
Pulse Width Distortion
Propagation Delay Difference Between Any
Two Parts
Rise Time
Fall Time
UVLO Turn On Delay
UVLO Turn Off Delay
Output High Level Common Mode Transient
Immunity
Output Low Level Common Mode Transient
Immunity
A
A
= 25°C
= 25°C
(9) (10)
(9) (11)
(8)
(7)
(12) (13)
(13)
T
R.H. < 50%, t = 1min.,
I
V
Freq. = 1MHz
I-O
A
I-O
Test Conditions
= 25°C,
≤ 10µA
= 500V
6
(6)
(6)
I
R
f = 250kHz,
Duty Cycle = 50%,
C
R
T
I
V
V
T
V
V
V
C
Test Conditions Min.
F
f
A
A
CM
DD
f
CM
DD
g
g
L
g
= 10mA to 16mA,
= 10mA,
= 0V,
= +25°C,
= +25°C,
= 10Ω,
= 10nF
= 10nF,
= 10Ω
= 30V
= 30V
= 2kV,
= 2kV,
DD
= 30V, V
Min.
5000
SS
= 0V, T
Typ.*
10
-90
50
50
35
35
1
11
A
= 25°C,
Typ.* Max.
120
145
2.0
0.3
35
38
24
50
50
Max.
210
210
www.fairchildsemi.com
65
90
Unit
V
pF
kV/µs
kV/µs
Ω
rms
Unit
ns
ns
ns
ns
ns
ns
µs
µs