FDMC3020DC Fairchild Semiconductor, FDMC3020DC Datasheet - Page 5

• Manufacturer Part Number: FDMC3020DC
• Description: MOSFET Power 30V NChan Dual Cool PowerTrench SyncFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC3020DC

• Gate Charge Qg: 15.5 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC3020DC Rev.C3
Typical Characteristics
0.001
0.01
300
100
0.1
10
30
10
10
1
1
0.01
Figure 7.
0.01
8
6
4
2
0
0
THIS AREA IS
LIMITED BY r
Figure 9.
SINGLE PULSE
T
R
T
J
A
θ
Figure 11. Forward Bias Safe
I
D
JA
= MAX RATED
= 25
= 12A
= 105
3
V
Switching Capability
o
C
DS
Gate Charge Characteristics
0.1
0.1
t
AV
o
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
C/W
Unclamped Inductive
DS(on)
, TIME IN AVALANCHE(ms)
Q
g
T
6
, GATE CHARGE(nC)
J
= 125
V
DD
1
o
C
1
= 10V
9
T
V
DD
J
T
= 25°C unless otherwise noted
J
= 20V
12
= 25
10
o
10
C
V
DD
15
= 15V
100 us
10 ms
100 ms
1 s
10 s
1ms
DC
100200
100
18
5
2000
1000
3000
1000
100
0.5
100
80
60
40
20
10
Figure 10. Maximum Continuous Drain
30
0
1
10
0.1
25
Figure 12. Single Pulse Maximum
-4
Figure 8.
Limited by Package
V
GS
Current vs Case Temperature
f = 1MHz
V
10
= 4.5 V
GS
-3
V
50
= 0V
DS
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
Capacitance vs Drain
C
10
t, PULSE WIDTH (sec)
V
,
CASE TEMPERATURE (
-2
GS
= 10 V
75
1
10
-1
1
100
SINGLE PULSE
R
T
R
A
θ
10
θ
JA
JC
= 25
o
C )
= 105
= 2.5
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125
10
o
C
C
C
C
100
oss
rss
iss
o
o
C/W
C/W
30
1000
150