FDMC3020DC Fairchild Semiconductor, FDMC3020DC Datasheet

MOSFET Power 30V NChan Dual Cool PowerTrench SyncFET

FDMC3020DC

Manufacturer Part Number
FDMC3020DC
Description
MOSFET Power 30V NChan Dual Cool PowerTrench SyncFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMC3020DC

Gate Charge Qg
15.5 nC
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Forward Transconductance Gfs (max / Min)
44 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
17 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 33
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC3020DC
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMC3020DC
Quantity:
220
©2010 Fairchild Semiconductor Corporation
FDMC3020DC Rev.C3
FDMC3020DC
N-Channel Dual Cool
30 V, 40 A, 6.25 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
dv/dt
P
T
R
R
R
R
R
R
R
D
DS
GS
AS
D
J
θJC
θJC
θJA
θJA
θJA
θJA
θJA
Dual Cool
Max r
Max r
High performance technology for extremely low r
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
3020
TM
= 6.25 mΩ at V
= 9.0 mΩ at V
Top Side Cooling PQFN package
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
GS
GS
FDMC3020DC
= 4.5 V, I
Power 33
= 10 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
TM
D
Pin 1
D
= 10 A
= 12 A
T
PowerTrench
A
S
= 25°C unless otherwise noted
S
Parameter
Dual Cool
DS(on)
S
G
Bottom
Package
TM
1
Power 33
D
T
T
T
T
T
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
C
C
C
A
A
®
D
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation
D
MOSFET
D
Reel Size
(Bottom Drain)
(Top Source)
13’’
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1k)
(Note 1i)
(Note 1j)
(Note 3)
(Note 4)
D
D
D
D
advanced
8
5
6
7
Tape Width
12 mm
-55 to +150
PowerTrench
Ratings
100
105
±20
3.0
7.9
2.5
1.6
30
40
70
17
50
42
17
26
12
60
www.fairchildsemi.com
October 2010
®
3000 units
TM
Quantity
4
1
3
2
process.
package
Units
°C/W
G
V/ns
S
S
S
DS(on)
°C
W
V
V
A
mJ

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FDMC3020DC Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 3020 FDMC3020DC ©2010 Fairchild Semiconductor Corporation FDMC3020DC Rev.C3 TM ® PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

Page 2

... Q Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2010 Fairchild Semiconductor Corporation FDMC3020DC Rev. °C unless otherwise noted J Test Conditions I = 250 μ 250 μA, referenced to 25 ° ...

Page 3

... Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° based on starting mH ≤ di/dt ≤ 100 A/μs, V ≤ Starting DSS ©2010 Fairchild Semiconductor Corporation FDMC3020DC Rev. °C/W when mounted pad copper 2 pad copper 2 pad copper 2 pad copper 2 pad copper = ...

Page 4

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 50 P PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC3020DC Rev. 25°C unless otherwise noted 3. 100 125 150 0.001 ...

Page 5

... LIMITED BY r DS(on) 0.1 SINGLE PULSE T = MAX RATED 105 C/W 0.01 θ 0.001 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC3020DC Rev. 25°C unless otherwise noted J 3000 1000 V = 15V 20V DD 100 100 Figure 10. Maximum Continuous Drain ...

Page 6

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC3020DC Rev. 25°C unless otherwise noted J SINGLE PULSE 105 C/W JA θ RECTANGULAR PULSE DURATION (sec NOTES: ...

Page 7

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC3020DC Rev.C3 4 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMC3020DC Rev.C3 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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