FDD86102 Fairchild Semiconductor, FDD86102 Datasheet - Page 4

• Manufacturer Part Number: FDD86102
• Description: MOSFET Power 100V N-Channel PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDD86102

• Gate Charge Qg: 13.4 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19 mOhms
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD86102 Rev.C2
Typical Characteristics
0.1
10
50
10
Figure 7.
9
8
7
6
5
4
3
2
1
8
6
4
2
0
0.01
1
0
1
Figure 9.
I
D
THIS AREA IS
LIMITED BY r
Figure 11. Forward Bias Safe
= 8 A
Switching Capability
V
Gate Charge Characteristics
3
DS
SINGLE PULSE
T
R
T
t
Operating Area
AV
, DRAIN to SOURCE VOLTAGE (V)
J
C
θ
Unclamped Inductive
0.1
JC
= MAX RATED
= 25
, TIME IN AVALANCHE (ms)
Q
DS(on)
= 3.8
g
, GATE CHARGE (nC)
V
o
C
DD
6
o
T
C/W
10
J
= 50 V
= 125
V
DD
T
o
= 25 V
1
C
J
9
= 25 °C unless otherwise noted
T
J
V
= 25
DD
= 75 V
o
T
12
C
J
= 100
10
100
10 ms
100 ms
DC
100 us
1 ms
o
C
200
30
15
4
10000
1000
100
1000
50
100
40
30
20
10
Figure 10.
10
0
10
25
0.1
Figure 12.
-5
f = 1 MHz
V
Figure 8.
Current vs Case Temperature
GS
V
GS
= 0 V
10
= 10 V
V
-4
50
DS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
c
Single Pulse Maximum
Capacitance vs Drain
,
CASE TEMPERATURE (
10
t, PULSE WIDTH (sec)
1
-3
75
10
-2
V
GS
R
100
= 4.5 V
θ
JC
10
= 2
10
-1
SINGLE PULSE
R
T
C
o
θ
o
C/W
JC
C )
V
= 25
GS
C
C
C
125
= 2
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= 10 V
1
o
o
C
C/W
150
10
100