This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... R is guaranteed by design while R is determined by the user’s board design. θJC θJA 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ° 3. Starting mH FDD86102 Rev. °C unless otherwise noted J Test Conditions = 250 µ 250 µA, referenced to 25 ° ± ...
... JUNCTION TEMPERATURE ( T J Figure 3. Normalized On- Resistance vs Junction Temperature 40 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD86102 Rev. °C unless otherwise noted J PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX 4 100 125 150 - 0.001 4.5 V ...
... TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 50 10 THIS AREA IS LIMITED DS(on) SINGLE PULSE T = MAX RATED 3.8 C/W θ DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD86102 Rev. °C unless otherwise noted J 1000 = 100 10000 100 us 1000 100 ...
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD86102 Rev.C2 ® FlashWriter * Power-SPM™ FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ ...