BGA 711L7 E6327 Infineon Technologies, BGA 711L7 E6327 Datasheet - Page 9

• Manufacturer Part Number: BGA 711L7 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Single Band Low Noise Amplifierr

Specifications of BGA 711L7 E6327

• Mounting Style: SMD/SMT
• Operating Frequency: 2100 MHz
• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.6 V to 3 V
• Supply Current: 3.6 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 30 C
• Package / Case: TSLP-7-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA711L7E6327XT

2.9
Table 7
Parameter
Pass band range band I / X
Pass band range band IV
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Stability factor
Input compression point
Inband IIP3
P
1) Verification based on AQL; not 100% tested in production
2) Guaranteed by device design; not tested in production
Data Sheet
f
1
f1
- f
= P
2
= 1 MHz
f2
= -37 dBm
1)
Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor)
Typical Characteristics 2100 MHz Band T
2)
1)
1)
1)
1)
Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor)
Symbol
I
I
S
S
S
S
NF
NF
S
S
S
S
k
IP
IP
IIP3
IIP3
CCHG
CCLG
21HG
21LG
12HG
12LG
11HG
11LG
22HG
22LG
1dBHG
1dBLG
HG
LG
HG
LG
Min.
2110
2110
BGA711L7 - Low Power Single-Band UMTS LNA
Typ.
3.6
0.5
17.0
-7.6
-36
-8
1.1
7.8
-20
-15
-19
-17
>2.3
-8
-2
-2
7
9
A
Values
= 25 °C,
Max.
2170
2155
V
CC
= 2.8 V,
Unit
MHz
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
R
REF
Electrical Characteristics
= 27 kΩ
Note / Test Condition
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50 Ω, high gain mode
50 Ω, low gain mode
50 Ω, high gain mode
50 Ω, low gain mode
DC to 10 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
V3.2, 2009-05-27