BGA 711L7 E6327 Infineon Technologies, BGA 711L7 E6327 Datasheet - Page 13

• Manufacturer Part Number: BGA 711L7 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Single Band Low Noise Amplifierr

Specifications of BGA 711L7 E6327

• Mounting Style: SMD/SMT
• Operating Frequency: 2100 MHz
• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.6 V to 3 V
• Supply Current: 3.6 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 30 C
• Package / Case: TSLP-7-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA711L7E6327XT

Noise Figure
2.13
V
Power Gain
Data Sheet
CC
= 2.8 V,
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
2.11
1
20
19
18
17
16
15
−40
Measured Performance High Band (Band I) High Gain Mode vs. Temperature
V
|S
NF
GS
21
2.12
−20
| = f (
= 2.8 V,
= f (
2.13
T
Frequency [GHz]
f
0
A
)
)
V
EN
20
2.14
T
A
= 2.8 V,
Measured Performance High Band (Band I) High Gain Mode vs. Temperature
[°C]
40
2.15
60
f
= 2140 MHz,
2.16
80
2.17
100
BGA711L7 - Low Power Single-Band UMTS LNA
R
Input Compression
REF
13
Supply Current
= 27 kΩ
−10
−12
−14
−2
−4
−6
−8
2.11
0
4.5
3.5
2.5
−40
5
4
3
2
2.12
−20
I
CC
P1dB
= f (
2.13
Frequency [GHz]
0
= f (
T
A
20
)
2.14
T
Electrical Characteristics
A
f
)
[°C]
40
2.15
60
V3.2, 2009-05-27
2.16
80
2.17
100