BGA 711L7 E6327 Infineon Technologies, BGA 711L7 E6327 Datasheet - Page 12
![RF Amplifier RF SILICON MMIC](/photos/16/1/160116/tslp-7-1_sml.jpg)
BGA 711L7 E6327
Manufacturer Part Number
BGA 711L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Single Band Low Noise Amplifierr
Datasheet
1.BGA_711L7_E6327.pdf
(23 pages)
Specifications of BGA 711L7 E6327
Mounting Style
SMD/SMT
Operating Frequency
2100 MHz
Noise Figure
1.1 dB
Operating Supply Voltage
2.6 V to 3 V
Supply Current
3.6 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
TSLP-7-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA711L7E6327XT
2.12
T
Power Gain
Matching |
Data Sheet
A
= 25 °C,
−10
−15
−20
−25
−30
20
19
18
17
16
15
−5
2.11
S
2.11
0
V
11
Measured Performance High Band (Band I) High Gain Mode vs. Frequency
|S
CC
| = f (
21
= 2.8 V,
| = f (
2.12
2.12
f
), |
f
2.13
Frequency [GHz]
2.13
Frequency [GHz]
S
)
V
22
GS
| = f (
= 2.8 V,
2.14
2.14
Measured Performance High Band (Band I) High Gain Mode vs. Frequency
f
)
2.15
2.15
V
EN
2.16
2.16
= 2.8 V,
−30°C
25°C
85°C
S
S
22
11
2.17
2.17
BGA711L7 - Low Power Single-Band UMTS LNA
R
REF
12
= 27 kΩ
Power Gain wideband
Gainstep HG-LG
25.5
24.5
−10
−20
−30
−40
−50
−60
20
10
26
25
24
2.11
0
0
2.12
|
∆
S
2
21
2.13
Frequency [GHz]
Frequency [GHz]
| = f (
|S
21
| = f (
Electrical Characteristics
2.14
f
4
)
f
2.15
)
V3.2, 2009-05-27
6
2.16
−30°C
−30°C
−30°C
25°C
25°C
25°C
85°C
85°C
85°C
2.17
8