BGA 711L7 E6327 Infineon Technologies, BGA 711L7 E6327 Datasheet - Page 16

RF Amplifier RF SILICON MMIC

BGA 711L7 E6327

Manufacturer Part Number
BGA 711L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Single Band Low Noise Amplifierr
Datasheet

Specifications of BGA 711L7 E6327

Mounting Style
SMD/SMT
Operating Frequency
2100 MHz
Noise Figure
1.1 dB
Operating Supply Voltage
2.6 V to 3 V
Supply Current
3.6 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
TSLP-7-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA711L7E6327XT
2.15
V
Power Gain
Noise Figure
Data Sheet
CC
= 2.8 V,
11
10
−10
−11
−40
9
8
7
6
5
−5
−6
−7
−8
−9
−40
Measured Performance High Band (Band I) Low Gain Mode vs. Temperature
V
|S
GS
NF
−20
21
−20
| = f (
= 0 V,
= f (
0
T
T
0
A
A
V
)
)
EN
20
T
20
A
T
= 2.8 V,
A
[°C]
Measured Performance High Band (Band I) Low Gain Mode vs. Temperature
[°C]
40
40
60
f
= 2140 MHz,
60
80
80
100
100
BGA711L7 - Low Power Single-Band UMTS LNA
R
REF
Input Compression
16
= 27 kΩ
Supply Current
−10
−2
−4
−6
−8
0.65
0.55
0.45
0.35
−40
4
2
0
0.7
0.6
0.5
0.4
0.3
−40
−20
−20
I
CC
P1dB
0
= f (
0
= f (
T
20
T
A
A
20
)
T
[°C]
T
Electrical Characteristics
A
A
40
[°C]
)
40
60
60
V3.2, 2009-05-27
80
80
100
100

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