BGA 711L7 E6327 Infineon Technologies, BGA 711L7 E6327 Datasheet - Page 17

RF Amplifier RF SILICON MMIC

BGA 711L7 E6327

Manufacturer Part Number
BGA 711L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Single Band Low Noise Amplifierr
Datasheet

Specifications of BGA 711L7 E6327

Mounting Style
SMD/SMT
Operating Frequency
2100 MHz
Noise Figure
1.1 dB
Operating Supply Voltage
2.6 V to 3 V
Supply Current
3.6 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
TSLP-7-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA711L7E6327XT
3
3.1
Figure 2
Note: Package paddle (Pin 0) has to be RF grounded.
Table 10
Part Number
L1
C1 ... C3
R
Data Sheet
REF
V
V
EN
GS
2100 MHz
= 0 / 2.8 V
= 0 / 2.8 V
Application Circuit and Block Diagram
UMTS bands I, IV and X Application Circuit Schematic
RFIN
Application circuit with chip outline (top view)
Parts List
100 pF
10pF
Part Type
Chip inductor
Chip capacitor
Chip resistor
C1
C2
2nH
L1
RFIN
VEN
VGS
1
2
3
Manufacturer
Various
Various
Various
Biasing & Logic
Circuitry
BGA711L7 - Low Power Single-Band UMTS LNA
UMTS bands I, IV and X Application Circuit Schematic
17
7 GND
BGA 711L7 _Appl _BlD_RREF.vsd
Size
0402
0402
0402
Application Circuit and Block Diagram
RFOUT
RREF
VCC
6
5
4
Comment
Wirewound, Q ≈ 50
10nF
V3.2, 2009-05-27
R
27 kΩ
C3
REF
V
RFOUT
2100 MHz
CC
= 2.8 V

Related parts for BGA 711L7 E6327