BGA 711L7 E6327 Infineon Technologies, BGA 711L7 E6327 Datasheet - Page 18

RF Amplifier RF SILICON MMIC

BGA 711L7 E6327

Manufacturer Part Number
BGA 711L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Single Band Low Noise Amplifierr
Datasheet

Specifications of BGA 711L7 E6327

Mounting Style
SMD/SMT
Operating Frequency
2100 MHz
Noise Figure
1.1 dB
Operating Supply Voltage
2.6 V to 3 V
Supply Current
3.6 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
TSLP-7-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA711L7E6327XT
3.2
Figure 3
Note: Package paddle (Pin 0) has to be RF grounded.
Table 11
Part Number
L1, L2
C1 ... C4
R
3.3
Table 12
Pin Number
1
2
3
4
5
6
7
Data Sheet
REF
V
V
EN
GS
1900 MHz
= 0 / 2.8 V
= 0 / 2.8 V
RFIN
UMTS band II Application Circuit Schematic
Application circuit with chip outline (top view)
Parts List
Pin Definition
Pin Definition and Function
100pF
10pF
C1
C2
Part Type
Chip inductor
Chip capacitor
Chip resistor
Symbol
RFIN
VEN
VGS
VCC
RREF
RFOUT
GND
2.7nH
L1
RFIN
VEN
VGS
1
2
3
Biasing & Logic
Circuitry
Manufacturer
Various
Various
Various
Function
LNA input (2100/1900 MHz)
Band select control
Gain step control
Supply voltage
Bias current reference resistor (high gain mode)
LNA output (2100/1900 MHz)
Package paddle; ground connection for LNA and control circuitry
BGA711L7_Appl _BlD_RREF_BandII.vsd
BGA711L7 - Low Power Single-Band UMTS LNA
7 GND
18
UMTS band II Application Circuit Schematic
Size
0402
0402
0402
Application Circuit and Block Diagram
RFOUT
RREF
VCC
6
5
4
2.7nH
L2
10nF
R
27kΩ
C3
REF
V
CC
Comment
Wirewound, Q ≈ 50
1.2pF
C4
= 2.8 V
V3.2, 2009-05-27
RFOUT
1900 MHz

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