FCPF16N60NT Fairchild Semiconductor, FCPF16N60NT Datasheet - Page 3
![MOSFET N-CH 600V TO-220-3](/photos/37/61/376186/to-220f-3_sml.jpg)
FCPF16N60NT
Manufacturer Part Number
FCPF16N60NT
Description
MOSFET N-CH 600V TO-220-3
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet
1.FCPF16N60NT.pdf
(10 pages)
Specifications of FCPF16N60NT
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
52.3nC @ 10V
Input Capacitance (ciss) @ Vds
2170pF @ 100V
Power - Max
35.7W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
134.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
16A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
170mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
1.08W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FCPF16N60NT
Manufacturer:
VISHAY
Quantity:
90
Part Number:
FCPF16N60NT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FCP16N60N / FCPF16N60NT Rev. A1
Typical Performance Characteristics
10000
7500
5000
2500
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
Figure 1. On-Region Characteristics
0.1
0.6
0.5
0.4
0.3
0.2
0.1
10
1
0
0.1
0.1
0
V
GS
=
15.0 V
10.0 V
V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
Drain Current and Gate Voltage
V
10
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
1
I
C
C
C
D
oss
, Drain Current [A]
iss
rss
20
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
10
*Notes:
1. 250 s Pulse Test
2. T
30
V
GS
*Notes: T
C
= 10V
= 25
(
C ds = shorted
V
*Notes:
GS
o
100
1. V
2. f = 1MHz
C
40
= 20V
C
GS
= 25
10
= 0V
o
C
)
600
20
50
3
Figure 2. Transfer Characteristics
100
Figure 4. Body Diode Forward Voltage
100
Figure 6. Gate Charge Characteristics
0.1
10
10
10
1
1
8
6
4
2
0
0.2
2
0
0.4
V
SD
10
Variation vs. Source Current
and Temperature
, Body Diode Forward Voltage [V]
V
150
Q
GS
0.6
g
o
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
C
150
4
V
V
V
DS
DS
DS
o
20
C
0.8
= 120V
= 380V
= 480V
-55
o
C
25
25
1.0
*Notes:
o
1. V
2. 250 s Pulse Test
30
o
C
C
*Notes:
1. V
2. 250 s Pulse Test
DS
6
*Notes: I
GS
1.2
= 20V
= 0V
40
1.4
D
= 8A
www.fairchildsemi.com
1.6
50
8