FCPF16N60NT Fairchild Semiconductor, FCPF16N60NT Datasheet - Page 3

• Manufacturer Part Number: FCPF16N60NT
• Description: MOSFET N-CH 600V TO-220-3
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCPF16N60NT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 199 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 100V
• Power - Max: 35.7W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 134.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 170mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 1.08W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCP16N60N / FCPF16N60NT Rev. A1
Typical Performance Characteristics
10000
7500
5000
2500
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
Figure 1. On-Region Characteristics
0.1
0.6
0.5
0.4
0.3
0.2
0.1
10
1
0
0.1
0.1
0
V
GS
=
15.0 V
10.0 V
V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
Drain Current and Gate Voltage
V
10
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
1
I
C
C
C
D
oss
, Drain Current [A]
iss
rss
20
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
10
*Notes:
1. 250 s Pulse Test
2. T
30
V
GS
*Notes: T
C
= 10V
= 25
(
C ds = shorted
V
*Notes:
GS
o
100
1. V
2. f = 1MHz
C
40
= 20V
C
GS
= 25
10
= 0V
o
C
)
600
20
50
3
Figure 2. Transfer Characteristics
100
Figure 4. Body Diode Forward Voltage
100
Figure 6. Gate Charge Characteristics
0.1
10
10
10
1
1
8
6
4
2
0
0.2
2
0
0.4
V
SD
10
Variation vs. Source Current
and Temperature
, Body Diode Forward Voltage [V]
V
150
Q
GS
0.6
g
o
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
C
150
4
V
V
V
DS
DS
DS
o
20
C
0.8
= 120V
= 380V
= 480V
-55
o
C
25
25
1.0
*Notes:
o
1. V
2. 250 s Pulse Test
30
o
C
C
*Notes:
1. V
2. 250 s Pulse Test
DS
6
*Notes: I
GS
1.2
= 20V
= 0V
40
1.4
D
= 8A
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1.6
50
8