FCPF16N60NT Fairchild Semiconductor, FCPF16N60NT Datasheet - Page 2
![MOSFET N-CH 600V TO-220-3](/photos/37/61/376186/to-220f-3_sml.jpg)
FCPF16N60NT
Manufacturer Part Number
FCPF16N60NT
Description
MOSFET N-CH 600V TO-220-3
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet
1.FCPF16N60NT.pdf
(10 pages)
Specifications of FCPF16N60NT
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
52.3nC @ 10V
Input Capacitance (ciss) @ Vds
2170pF @ 100V
Power - Max
35.7W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
134.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
16A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
170mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
1.08W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FCPF16N60NT
Manufacturer:
VISHAY
Quantity:
90
Part Number:
FCPF16N60NT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FCP16N60N / FCPF16N60NT Rev. A1
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
d(on)
d(off)
f
DSS
GSS
r
S
SM
rr
BV
FS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
AS
SD
g(tot)
gs
gd
rr
T
Device Marking
Symbol
DSS
FCPF16N60NT
= 5.3A, R
J
DSS
eff.
FCP16N60N
16A, di/dt
G
= 25 , Starting T
200A/ s, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 380V, Starting T
J
FCPF16N60NT
= 25 C
FCP16N60N
Device
Parameter
J
= 25 C
T
C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
Drain Open
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
G
F
= 1mA, V
= 1mA, Referenced to 25
/dt = 100A/ s
= 4.7
= 480V, V
= 480V, V
= 0V, I
= ±30V, V
= 40V, I
= 0V, I
= V
= 10V, I
= 100V, V
= 380V, V
= 0V to 480V, V
= 380V, I
= 10V
= 380V, I
DS
Test Conditions
, I
2
SD
SD
GS
Reel Size
D
D
D
D
D
= 8A
= 8A
= 8A
GS
GS
DS
= 250 A
= 8A
GS
GS
= 0V, T
= 8A
= 8A,
-
-
= 0V
= 0V, T
= 0V
= 0V
= 0V, f = 1MHz
GS
C
= 0V
= 25
C
= 125
o
C
o
C
(Note 4)
(Note 4)
o
Tape Width
C
-
-
Min.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.170
1630
Typ.
40.2
12.9
15.8
15.5
60.3
20.2
0.73
319
176
4.4
6.7
2.9
70
40
13
5
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
130.6
Max.
0.199
±100
2170
41.6
41.0
50.4
52.3
100
4.0
1.2
10
95
10
60
16
48
50
50
-
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
nA
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
o
A
C
C