FDZ372NZ Fairchild Semiconductor, FDZ372NZ Datasheet - Page 4

• Manufacturer Part Number: FDZ372NZ
• Description: MOSFET N-CH 1.5V SPECIFIED 4-WLC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ372NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 9.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 685pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 4-WLCSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
Typical Characteristics
10
10
10
10
10
10
10
10
10
10
4.5
3.0
1.5
0.0
Figure 7.
-10
-1
-2
-3
-4
-5
-6
-7
-8
-9
200
100
Figure 9. Gate Leakage Current vs
0.4
0
10
0
10
1
V
DS
-4
I
D
= 4.7 A
= 0 V
V
3
Gate Charge Characteristics
GS ,
V
Gate to Source Voltage
2
DD
GATE TO SOURCE VOLTAGE (V)
Q
= 10 V
g
, GATE CHARGE (nC)
10
T
T
J
J
6
-3
= 25
= 125
V
Figure 11. Single Pulse Maximum Power Dissipation
o
DD
4
C
o
C
V
= 8 V
T
DD
J
9
= 25 °C unless otherwise noted
= 12 V
10
-2
6
12
t, PULSE WIDTH (sec)
15
8
10
-1
4
Figure 10. Forward Bias Safe Operating Area
0.01
1000
0.1
100
20
10
1
10
1
0.01
0.01
Figure 8.
f = 1 MHz
V
GS
= 0 V
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
V
V
J
A
θ
DS
DS
JA
to Source Voltage
= MAX RATED
= 25
0.1
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
= 260
10
0.1
o
C
o
C/W
DS(on)
1
100
1
SINGLE PULSE
R
T
A
θ
JA
= 25
10
= 260
o
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C
o
100 us
1 ms
10 ms
10 s
DC
100 ms
C/W
1 s
C
C
C
rss
10
1000
oss
iss
100
20