FDZ372NZ Fairchild Semiconductor, FDZ372NZ Datasheet

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FDZ372NZ

Manufacturer Part Number
FDZ372NZ
Description
MOSFET N-CH 1.5V SPECIFIED 4-WLC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDZ372NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
9.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
685pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
4-WLCSP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
FDZ372NZ
N-Channel 1.5 V Specified PowerTrench
20 V, 4.7 A, 50 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJA
θJA
Max r
Max r
Max r
Max r
Occupies only 1.0 mm
area of 2x2 BGA
Ultra-thin package: less than 0.4 mm height when mounted
to PCB
HBM ESD protection level > 3200V (Note3)
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
L
= 50 mΩ at V
= 60 mΩ at V
= 72 mΩ at V
= 93 mΩ at V
D
BOTTOM
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
S
2
of PCB area. Less than 30% of the
GS
GS
GS
GS
G
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 1.5 V, I
FDZ372NZ
-Pulsed
Device
S
WL-CSP 1.0X1.0 Thin
Pin 1
D
D
D
D
= 2 A
= 2 A
= 1 A
= 1 A
T
A
= 25 °C unless otherwise noted
Pin 1
Parameter
WL-CSP 1.0x1.0 Thin
Package
1
T
T
T
A
A
A
= 25 °C
= 25 °C
= 25 °C
TOP
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ372NZ minimizes both PCB space and r
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r
Applications
Battery management
Load switch
Battery protection
®
Thin WL-CSP MOSFET
Reel Size
7 ’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Tape Width
8 mm
-55 to +150
Ratings
DS(on)
260
4.7
1.7
0.5
20
±8
12
75
.
www.fairchildsemi.com
March 2010
5000 units
Quantity
DS(on)
®
process
Units
°C/W
. This
°C
W
V
V
A

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FDZ372NZ Summary of contents

Page 1

... Designed on Fairchild's advanced 1.5 V PowerTrench = with state of the art "fine pitch" Thin WLCSP packaging process the FDZ372NZ minimizes both PCB space and r advanced WLCSP MOSFET embodies a breakthrough packaging technology which enables the device to combine = 1 A excellent thermal transfer characteristics, ultra-low profile ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDZ372NZ Rev. °C unless otherwise noted J Test Conditions = 250 µ ...

Page 3

... J Figure 3. Normalized On- Resistance vs Junction Temperature 12 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDZ372NZ Rev. °C unless otherwise noted J = 1.8 V µ s 1.0 1 100 125 150 - 0.001 1.5 2 ...

Page 4

... - GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage 200 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDZ372NZ Rev. °C unless otherwise noted Figure 10. Forward Bias Safe Operating Area - PULSE WIDTH (sec) 4 1000 100 MHz ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDZ372NZ Rev. °C unless otherwise noted J SINGLE PULSE 260 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDZ372NZ Rev.C2 6 www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDZ372NZ Rev.C2 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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