FDS4465_F085 Fairchild Semiconductor, FDS4465_F085 Datasheet - Page 4

• Manufacturer Part Number: FDS4465_F085
• Description: MOSFET P-CH 20V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4465_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 13.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 13.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8237pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS4465_F085 Rev. A
Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
Figure 7. Gate Charge Characteristics.
0.1
I
D
0.001
= -13.5A
R
SINGLE PULSE
0.01
R
0.1
DS(ON)
V
JA
0.0001
T
1
GS
A
= 125
= 25
= -4.5V
20
LIMIT
o
o
C
C/W
D = 0.5
-V
0.2
0.1
0.05
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
Q
g
1
0.01
SINGLE PULSE
, GATE CHARGE (nC)
40
0.001
DC
10s
1s
Figure 11. Transient Thermal Response Curve.
100ms
60
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
V
DS
10
1ms
= -5V
0.01
100 s
80
-15V
-10V
100
100
0.1
t
1
, TIME (sec)
4
10000
50
40
30
20
10
8000
6000
4000
2000
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
C
t
1
ISS
C
C
, TIME (sec)
OSS
RSS
10
P(pk)
Duty Cycle, D = t
T
R
1
J
R
JA
- T
100
JA
(t) = r(t) + R
A
t
= 125
1
= P * R
t
SINGLE PULSE
R
2
www.fairchildsemi.com
JA
15
T
A
o
= 125°C/W
10
C/W
= 25°C
JA
f = 1 MHz
V
1
GS
(t)
JA
/ t
= 0 V
2
1000
100
20