FDS4465_F085 Fairchild Semiconductor, FDS4465_F085 Datasheet

MOSFET P-CH 20V 8-SOIC

FDS4465_F085

Manufacturer Part Number
FDS4465_F085
Description
MOSFET P-CH 20V 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS4465_F085

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 13.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
13.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 4.5V
Input Capacitance (ciss) @ Vds
8237pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDS4465_F085 Rev. A
FDS4465_F085
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JA
JC
Device Marking
STG
FDS4465
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
D
FDS4465_F085
– Continuous
– Pulsed
D
D
Device
Parameter
S
S
S
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
1
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
RoHS Compliant
Qualified to AEC Q101
–13.5 A, –20 V. R
Fast switching speed
High performance trench technology for extremely
low R
High current and power handling capability
DS(ON)
5
6
7
8
Tape width
12mm
–55 to +175
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–13.5
–20
–50
125
2.5
1.5
1.2
50
25
8
= 8.5 m @ V
= 10.5 m @ V
= 14 m @ V
February 2010
4
3
2
1
www.fairchildsemi.com
GS
GS
2500 units
GS
Quantity
= –1.8 V
= –4.5 V
= –2.5 V
Units
C/W
C/W
C/W
W
V
V
A
C
tm

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FDS4465_F085 Summary of contents

Page 1

... R JC Package Marking and Ordering Information Device Marking Device FDS4465 FDS4465_F085 ©2010 Fairchild Semiconductor Corporation FDS4465_F085 Rev. A Features –13.5 A, – Fast switching speed High performance trench technology for extremely low R High current and power handling capability Qualified to AEC Q101 RoHS Compliant ...

Page 2

... JA the drain pins guaranteed by design while °C/W when mounted on a 1in pad copper Scale letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% FDS4465_F085 Rev 25°C unless otherwise noted A Test Conditions –250 – ...

Page 3

... T , JUNCTION TEMPERATURE ( J Figure 3. On-Resistance Variation with Temperature -5. 125 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDS4465_F085 Rev 2.6 2 1.8 1.4 1 0.6 1 1.5 0 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 0.02 0.015 0.01 0.005 0 100 125 150 175 Figure 4. On-Resistance Variation with ...

Page 4

... DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 Figure 11. Transient Thermal Response Curve. FDS4465_F085 Rev. A 10000 V = -5V DS -10V 8000 -15V 6000 4000 2000 0 80 100 0 Figure 8. Capacitance Characteristics. 50 ...

Page 5

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS4465_F085 Rev. A ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ® Green FPS™ e-Series™ ...

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