FDS4465_F085 Fairchild Semiconductor, FDS4465_F085 Datasheet - Page 3

• Manufacturer Part Number: FDS4465_F085
• Description: MOSFET P-CH 20V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4465_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 13.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 13.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8237pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS4465_F085 Rev. A
Typical Characteristics
50
40
30
20
10
50
40
30
20
10
0
0
0
Figure 3. On-Resistance Variation with
0
1.6
1.4
1.2
0.8
0.6
Figure 1. On-Region Characteristics.
1
-50
V
Figure 5. Transfer Characteristics.
V
DS
GS
-2.5V
V
I
= -5.0V
D
= -4.5V
GS
= -13.5A
-25
= -10V
-V
-V
-1.8V
0.5
DS
GS
0
, DRAIN TO SOURCE VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
0.5
-2.0V
25
T
A
= 125
50
1
o
C
-1.5V
75
-55
1
100
o
C
25
1.5
o
o
C)
C
125
150
1.5
175
2
3
Figure 6. Body Diode Forward Voltage Variation
0.025
0.015
0.005
0.0001
0.02
0.01
0.001
2.6
2.2
1.8
1.4
0.6
0.01
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
3
1
0
10
1
0
0
0
Drain Current and Gate Voltage.
V
GS
V
GS
= 0V
Gate-to-Source Voltage.
= -1.5V
T
0.2
-V
A
10
= 125
1
SD
-V
T
, BODY DIODE FORWARD VOLTAGE (V)
A
GS
= 25
, GATE TO SOURCE VOLTAGE (V)
o
C
-I
0.4
D
o
, DRAIN CURRENT (A)
C
25
-1.8V
20
o
2
C
-55
T
-2.0V
0.6
A
= 125
o
C
30
3
o
C
-2.5V
0.8
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I
D
40
= -6.3A
4
-4.5V
1
50
1.2
5