FDD13AN06A0_F085 Fairchild Semiconductor, FDD13AN06A0_F085 Datasheet - Page 4

• Manufacturer Part Number: FDD13AN06A0_F085
• Description: MOSFET N-CH 60V 50A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD13AN06A0_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Figure 5. Forward Bias Safe Operating Area
100
1000
30
25
20
15
10
80
60
40
20
100
0.1
0
10
1
3
0
1
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
Figure 7. Transfer Characteristics
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
DD
SINGLE PULSE
T
T
OPERATION IN THIS
LIMITED BY r
J
C
= 15V
= MAX RATED
= 25
AREA MAY BE
T
J
o
10
= 25
C
V
V
DS
GS
4
, DRAIN TO SOURCE VOLTAGE (V)
o
, GATE TO SOURCE VOLTAGE (V)
C
DS(ON)
I
D
, DRAIN CURRENT (A)
Current
20
T
V
J
GS
V
= 175
GS
= 10V
10
= 6V
5
o
C
30
T
T
C
J
= -55
= 25°C unless otherwise noted
DC
6
100μs
10μs
o
1ms
C
40
10ms
100
50
7
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
100
Figure 10. Normalized Drain to Source On
10
Figure 6. Unclamped Inductive Switching
80
60
40
20
2.5
2.0
1.5
1.0
0.5
1
0.01
0
-80
0
Resistance vs Junction Temperature
Figure 8. Saturation Characteristics
T
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
C
STARTING T
= 25
-40
o
C
V
If R = 0
t
If R ≠ 0
t
DS
0.1
AV
T
AV
0.5
J
t
, DRAIN TO SOURCE VOLTAGE (V)
AV
, JUNCTION TEMPERATURE (
= (L)(I
= (L/R)ln[(I
, TIME IN AVALANCHE (ms)
0
J
= 150
Capability
AS
)/(1.3*RATED BV
o
STARTING T
40
C
AS
*R)/(1.3*RATED BV
1.0
1
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
80
V
GS
J
= 25
= 5V
DSS
V
GS
120
V
o
V
GS
- V
C
10
1.5
= 10V, I
GS
FDD13AN06A0_F085 Rev. A
o
C)
DD
DSS
= 10V
= 20V
)
V
160
- V
GS
D
=50A
DD
= 6V
) +1]
100
200
2.0