FDD13AN06A0_F085 Fairchild Semiconductor, FDD13AN06A0_F085 Datasheet - Page 10

• Manufacturer Part Number: FDD13AN06A0_F085
• Description: MOSFET N-CH 60V 50A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD13AN06A0_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
PSPICE Thermal Model
REV 22 August 2002
FDD13AN06A0T
CTHERM1 TH 6 9.7e-4
CTHERM2 6 5 6.2e-3
CTHERM3 5 4 4.6e-3
CTHERM4 4 3 4.9e-3
CTHERM5 3 2 8e-3
CTHERM6 2 TL 4.2e-2
RTHERM1 TH 6 5.24e-2
RTHERM2 6 5 10.08e-2
RTHERM3 5 4 4.28e-1
RTHERM4 4 3 1.8e-1
RTHERM5 3 2 1.9e-1
RTHERM6 2 TL 2.1e-1
SABER Thermal Model
SABER thermal model FDD13AN06A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =9.7e-4
ctherm.ctherm2 6 5 =6.2e-3
ctherm.ctherm3 5 4 =4.6e-3
ctherm.ctherm4 4 3 =4.9e-3
ctherm.ctherm5 3 2 =8e-3
ctherm.ctherm6 2 tl =4.2e-2
rtherm.rtherm1 th 6 =5.24e-2
rtherm.rtherm2 6 5 =10.08e-2
rtherm.rtherm3 5 4 =4.28e-1
rtherm.rtherm4 4 3 =1.8e-1
rtherm.rtherm5 3 2 =1.9e-1
rtherm.rtherm6 2 tl =2.1e-1
}
RTHERM5
RTHERM1
RTHERM2
RTHERM3
RTHERM6
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM6
CTHERM1
CTHERM3
CTHERM4
FDD13AN06A0_F085 Rev. A