FDG1024NZ Fairchild Semiconductor, FDG1024NZ Datasheet - Page 4

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FDG1024NZ

Manufacturer Part Number
FDG1024NZ
Description
MOSFET N-CH DUAL 20V SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDG1024NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
175 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
2.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
150pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
321 m Ohms
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
20 V
Continuous Drain Current
1.2 A
Power Dissipation
0.36 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG1024NZ
Manufacturer:
FSC
Quantity:
21 000
Part Number:
FDG1024NZ
0
©2010 Fairchild Semiconductor Corporation
FDG1024NZ Rev.C
Typical Characteristics
0.01
0.1
10
5
4
3
2
1
0
Figure 7.
1
0.01
100
0.1
0
10
1
10
I
D
THIS AREA IS
LIMITED BY r
Figure 9.
= 1.2 A
-4
0.5
V
DS
Gate Charge Characteristics
0.1
SINGLE PULSE
T
R
T
, DRAIN to SOURCE VOLTAGE (V)
V
Operating Area
J
A
θ
DD
DS(on)
JA
Q
= MAX RATED
= 25
Forward Bias Safe
g
= 5 V
= 415
, GATE CHARGE (nC)
V
10
GS
o
1.0
C
-3
= 4.5 V
o
C/W
V
DD
1
Figure 11. Single Pulse Maximum Power Dissipation
= 15 V
T
1.5
J
= 25 °C unless otherwise noted
V
DD
10
= 10 V
10
-2
2.0
10 ms
100 ms
0.1 ms
1 ms
1 s
DC
100
2.5
10
t, PULSE WIDTH (sec)
-1
SINGLE PULSE
R
T
4
A
θ
JA
= 25
Figure 10.
= 415
o
C
o
10
10
C/W
10
10
300
100
10
10
-1
-3
1
5
3
5
0.1
0
Figure 8.
V
GS
Gate Leakage Current vs Gate to Source
f = 1 MHz
V
GS
= 0 V
2
= 0 V
V
V
DS
GS ,
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
GATE TO SOURCE VOLTAGE (V)
4
10
T
J
= 125
Voltage
6
1
o
T
C
J
= 25
8
o
100
C
10
www.fairchildsemi.com
12
10
C
C
C
oss
rss
iss
1000
14
20

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