FDG1024NZ Fairchild Semiconductor, FDG1024NZ Datasheet

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FDG1024NZ

Manufacturer Part Number
FDG1024NZ
Description
MOSFET N-CH DUAL 20V SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDG1024NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
175 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
2.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
150pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
321 m Ohms
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
20 V
Continuous Drain Current
1.2 A
Power Dissipation
0.36 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG1024NZ
Manufacturer:
FSC
Quantity:
21 000
Part Number:
FDG1024NZ
0
©2010 Fairchild Semiconductor Corporation
FDG1024NZ Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDG1024NZ
Dual N-Channel PowerTrench
20 V, 1.2 A, 175 mΩ
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJA
Max r
Max r
Max r
Max r
HBM ESD protection level >2 kV (Note 3)
Very low level gate drive requirements allowing operation in
1.5 V circuits (V
Very small package outline SC70-6
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
.4N
= 175 mΩ at V
= 215 mΩ at V
= 270 mΩ at V
= 389 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
GS(th)
D1
< 1 V)
G2
GS
GS
GS
GS
SC70-6
S2
-Continuous
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 1.5 V, I
-Pulsed
FDG1024NZ
Device
S1
D
D
D
D
= 1.2 A
= 1.0 A
= 0.9 A
= 0.8 A
G1
T
A
= 25 °C unless otherwise noted
D2
Parameter
®
Package
MOSFET
SC70-6
1
T
T
T
General Description
This dual N-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This device
has been designed especially for low voltage applications as a
replacement for bipolar digital transistors and small signal
MOSFETs. Since bias resistors are not required, this dual digital
FET can replace several different digital transistors, with
different bias resistor values.
A
A
A
= 25°C
= 25°C
= 25°C
G1
S1
D2
Reel Size
1
2
3
7 ”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Tape Width
8 mm
-55 to +150
6
5
4
Ratings
0.36
0.30
350
415
1.2
20
±8
D1
G2
S2
6
www.fairchildsemi.com
June 2010
Quantity
3000 units
Units
°C/W
°C
W
V
V
A

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FDG1024NZ Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .4N FDG1024NZ ©2010 Fairchild Semiconductor Corporation FDG1024NZ Rev.C ® MOSFET General Description = 1.2 A This dual N-Channel logic level enhancement mode field effect D transistors are produced using Fairchild’s proprietary, high cell = 1 ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDG1024NZ Rev °C unless otherwise noted J Test Conditions = 250 µ ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 - GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDG1024NZ Rev °C unless otherwise noted 2.0 µ 0.5 1.2 1.6 2.0 600 500 400 300 200 100 ...

Page 4

... 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDG1024NZ Rev °C unless otherwise noted J 300 100 1.5 2.0 2 100 100 Figure 10. SINGLE PULSE ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - ©2010 Fairchild Semiconductor Corporation FDG1024NZ Rev °C unless otherwise noted J SINGLE PULSE 415 C/W θ RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDG1024NZ Rev.C 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDG1024NZ Rev.C Power-SPM™ ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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