FPDB40PH60B Fairchild Semiconductor, FPDB40PH60B Datasheet - Page 5

IC PFC CONTROLLER SPM27GC

FPDB40PH60B

Manufacturer Part Number
FPDB40PH60B
Description
IC PFC CONTROLLER SPM27GC
Manufacturer
Fairchild Semiconductor
Type
IGBTr
Datasheet

Specifications of FPDB40PH60B

Configuration
2 Phase
Current
40A
Voltage
600V
Voltage - Isolation
2500Vrms
Package / Case
SPM27GC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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©2009 Fairchild Semiconductor Corporation
Electrical Characteristics
Converter Part
Note
3. t
Control Part
Note
4. The fault-out pulse width t
Recommended Operating conditions
IGBT saturation voltage
High-side diode voltage
Low-side diode voltage
Switching Times
Current sensing resistor
Collector - emitter
Leakage Current
Quiescent V
rent
Fault Output Voltage
Over Current Trip Level
Supply Circuit Under-
Voltage Protection
Fault-out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
Input Supply Voltage
Output Voltage
Control Supply Voltage
Control Supply Variation
PWM Input Signal
internally. For the detailed information, please see Fig. 4
ON
and t
OFF
Item
Item
Item
include the propagation delay time of the internal drive IC. t
CC
Supply Cur-
FOD
depends on the capacitance value of C
Symbol
V
R
Symbol
V
Symbol
dV
V
t
UV
UV
V
t
C(OFF)
I
V
IN(OFF)
CE(sat)
C(ON)
SENSE
V
f
t
I
V
QCCL
SC(ref)
t
IN(ON)
V
R
V
V
t
PWM
OFF
CES
FOD
ON
FOH
CC
t
I
FOL
V
FH
CC
FL
rr
rr
CCD
CCR
TH
PN
I
/dt Applied between IN - COM
V
V
V
V
Detection Level
Reset Level
C
Applied between IN - COM
@ T
@ T
Applied between R - S
Applied between P - N
Applied between V
T
C
(T
CC
SC
SC
CC
FOD
V
I
I
V
V
(Note 3)
V
≤ 100°C, T
F
F
J
CC
PN
IN
CE
C
C
= 15V, IN = 0V V
= 0V, V
= 1V, V
= 15V
= 25°C, Unless Otherwise Specified)
= 40A
= 40A
= 33nF (Note 4)
= 25°C (Note Fig. 9)
= 80°C (Note Fig. 9)
= 0V ↔ 5V, Inductive Load
=15V, V
= 400V, V
= V
CES
FO
FO
J
FOD
Circuit: 4.7kΩ to 5V Pull-up
Circuit: 4.7kΩ to 5V Pull-up
C(ON)
IN
≤ 125°C, Per IGBT
CC
= 5V; I
according to the following approximate equation : C
CC
Condition
Condition
and t
Condition
= 15V, I
- COM
CC
C(OFF)
C
=40A
- COM
C
are the switching time of IGBT itself under the given gate driving condition
=40A
Min.
1.8
Min.
0.45
10.7
Min.
13.5
11.2
180
-
-
-
-
-
-
-
-
-
-
4.5
1.4
3.0
-1
-
-
-
-
-
-
-
FOD
Typ.
1.15
500
180
500
= 18.3 x 10
1.8
2.2
2.0
90
43
6
Typ.
12.4
5.76
Typ.
-
11.9
280
0.5
1.8
50
15
20
-
-
-
-
-
-
-
Max.
1.55
-6
250
2.3
2.7
2.2
Max.
Max.
13.0
13.2
0.55
16.5
264
400
2.0
-
-
-
-
-
-
0.8
0.8
x t
26
1
-
-
-
-
-
FOD
[F]
February, 2009
Unit
μA
Unit
Unit
V
V/μs
ns
ns
ns
ns
ns
kHz
V
V
V
A
mA
ms
V
V
V
V
V
V
V
rms
V
V

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