FMG1G100US60H Fairchild Semiconductor, FMG1G100US60H Datasheet - Page 95

• Manufacturer Part Number: FMG1G100US60H
• Description: IGBT MOLDING 600V 100A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG1G100US60H

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.84nF @ 30V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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Bipolar Power Transistors – Switching Transistors
TO-126 NPN Configuration
KSC2752
FJE3303
KSE13003
FJE5304D
KSE5020
KSC5026M
TO-126 PNP Configuration
KSA1156
TO-220 NPN Configuration
FJP3835
KSC2333
FJP5304D
KSE13005
FJP3305
KSC2518
BUT11
KSC5039
KSC2335
BUT12
FJP13007
FJP13009
FJP5355
BUT11A
BUT12A
KSC5020
FJP5021
KSC5321
FJP5321
FJP5027
KSC5027
TO-220F NPN Configuration
FJPF3835
Products
V
CEO
400
400
400
400
500
800
400
120
400
400
400
400
400
400
400
400
400
400
400
440
450
450
500
500
500
500
800
800
120
(V) V
CBO
1100
1000
1000
1100
1100
500
700
700
700
800
400
200
500
700
700
700
500
850
800
500
850
700
700
900
800
800
800
800
200
(V) V
EBO
12
12
12
–
–
7
9
9
7
7
7
8
7
9
9
7
9
7
7
9
9
9
7
7
7
7
7
7
8
(V) I
C
0.5
1.5
1.5
1.5
0.5
12
4
3
8
2
4
4
4
4
5
5
7
8
8
5
5
8
3
5
5
5
3
3
8
(A)
P
C
100
100
100
100
100
100
100
10
20
20
30
30
20
10
50
15
70
75
75
40
70
40
80
50
40
50
50
50
30
(W)
Min
120
120
20
15
10
30
20
10
19
20
10
20
15
15
15
15
15
10
10
–
–
–
–
8
8
8
8
8
8
Max
200
250
250
80
21
40
40
50
40
80
40
60
35
80
80
60
40
50
50
40
40
40
40
–
–
–
–
–
–
2-90
Discrete Power Products –
@I
h
FE
0.05
0.01
0.5
0.5
0.3
0.1
0.1
0.1
0.3
0.3
0.3
0.6
0.6
0.6
0.2
0.2
C
–
–
–
–
2
3
2
1
1
1
2
5
3
(A) @V
CE
5
2
2
5
5
5
5
4
5
5
5
5
5
–
5
5
–
5
5
2
–
–
5
5
5
5
5
5
4
(V)
Bold = New Products (introduced January 2003 or later)
Typ (V) Max (V) @I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.5
0.7
0.5
0.7
0.5
0.5
1.5
1.5
1.5
0.2
1.5
1.5
0.5
1
1
2
1
1
1
1
1
1
1
1
1
1
2
2
V
Bipolar Transistors and JFETs
CE
(sat)
0.75
0.3
0.5
0.5
0.5
1.5
0.1
0.5
0.5
1.5
2.5
0.8
2.5
1.5
1.5
1.5
C
3
1
1
3
3
6
2
5
6
3
3
3
3
(A) @I
0.06
0.15
0.01
0.1
0.1
0.1
0.3
0.3
0.1
0.1
0.2
0.2
0.3
0.6
0.5
0.6
1.2
0.4
0.2
0.5
1.2
0.3
0.6
0.6
0.6
0.3
0.3
0.3
B
1
(A)
t
STG
6.68
6.68
2.5
2.5
0.6
0.9
2.5
2.5
1.2
6.5
–
4
4
3
3
4
4
4
3
4
3
3
4
4
3
3
3
3
3
(µs) t
F
0.68
0.68
0.7
0.7
0.3
0.3
0.1
0.9
0.7
0.8
0.8
0.8
0.7
0.7
0.4
0.8
0.8
0.3
0.3
0.3
0.3
0.3
0.3
(µs)
1
–
1
1
4
1