FMG1G100US60H Fairchild Semiconductor, FMG1G100US60H Datasheet - Page 80

• Manufacturer Part Number: FMG1G100US60H
• Description: IGBT MOLDING 600V 100A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG1G100US60H

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.84nF @ 30V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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Bipolar Power Transistors – Anti-Saturation Transistors
TO-220 NPN Configuration
KSC5302D
KSC5402DT
KSC5603D
KSC5305D
KSC5338D
TO-252(DPAK) NPN Configuration
KSC5502D
TO-263(D
KSC5603D
Products
2
PAK) NPN Configuration
V
CBO
1000
1600
1000
1200
1600
800
800
(V) V
CEO
400
450
800
400
450
600
800
(V) V
EBO
12
12
12
12
12
12
12
(V)
I
C
2
2
3
5
5
2
3
(A)
P
C
100
100
50
30
75
75
50
(W)
Min
20
14
20
22
15
20
6
Max
35
40
35
–
–
–
–
2-75
Discrete Power Products –
h
FE
@I
0.4
0.4
0.4
0.8
0.2
0.4
C
2
(A) @V
CE
1
1
3
1
1
1
3
(V) Typ (V) Max (V) @I
0.25
0.47
0.31
0.5
0.5
–
–
1.25
0.75
1.25
0.4
0.6
0.4
0.8
V
Bipolar Transistors and JFETs
CE
(sat)
0.25
0.25
0.4
0.4
0.8
0.2
C
2
(A) @I
0.025
0.025
0.04
0.04
0.08
0.02
0.4
B
(A)
t
STG
0.175
0.175
0.65
2.2
2
2
2
(µs) t
0.175
F
0.15
0.2
0.2
0.2
0.2
0.2
(µs)