HGT1N40N60A4D Fairchild Semiconductor, HGT1N40N60A4D Datasheet - Page 4

• Manufacturer Part Number: HGT1N40N60A4D
• Description: IGBT SMPS N-CHAN 600V SOT-227
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1N40N60A4D

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 40A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 298W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -
• Lead Free Status / Rohs Status: Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
42
40
38
36
34
32
30
28
26
24
22
500
80
70
60
50
40
30
20
10
0
0
0
0
0
T
R
R
J
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250ms
G
G
= 25
0.25
= 2.2Ω, L = 200mH, V
= 2.2Ω, L = 200mH, V
10
EMITTER CURRENT
EMITTER CURRENT
10
I
V
o
I
CE
CE
C, T
CE
0.5
, COLLECTOR TO EMITTER CURRENT (A)
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER VOLTAGE (V)
J
J
20
= 125
= 125
20
0.75
o
o
T
C, V
C, V
30
J
30
1.0
= 150
T
GE
GE
CE
GE
J
CE
T
= 125
T
= 15V
J
= 390V
= 12V
1.25
= 12V, V
o
= 390V
J
= 25
40
40
C
= 25
o
C
o
C, T
o
1.5
GE
C, V
50
50
J
= 15V
GE
= 125
1.75
(Unless Otherwise Specified) (Continued)
= 12V, V
60
60
o
C, V
2.0
T
J
GE
GE
= 25
70
2.25
70
= 15V
= 15V
o
C
2.5
80
80
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
1800
1600
1400
1200
1000
120
100
800
600
400
200
80
60
40
20
80
70
60
50
40
30
20
10
0
0
0
0
0
0
R
R
G
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250ms
G
0.25
= 2.2Ω, L = 200mH, V
= 2.2Ω, L = 200mH, V
10
10
EMITTER CURRENT
EMITTER CURRENT
V
I
I
CE
CE
CE
0.5
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
J
20
= 125
20
= 125
0.75
T
o
J
o
C, T
T
C, V
30
= 150
30
J
1.0
= 125
J
T
CE
GE
J
CE
GE
= 25
= 25
o
1.25
= 390V
C
= 12V OR 15V
= 390V
T
= 15V
o
40
40
o
J
C
C, V
o
= 25
C, T
1.5
GE
o
J
50
50
C, V
= 125
= 12V
1.75
GE
HGT1N40N60A4D Rev. B
o
= 12V OR 15V
C, V
60
60
2.0
T
GE
J
= 25
= 15V
70
70
2.25
o
C
2.5
80
80