HGT1N40N60A4D Fairchild Semiconductor, HGT1N40N60A4D Datasheet - Page 2

• Manufacturer Part Number: HGT1N40N60A4D
• Description: IGBT SMPS N-CHAN 600V SOT-227
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1N40N60A4D

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 40A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 298W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -
• Lead Free Status / Rohs Status: Compliant

©2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
RMS Isolation Voltage, Any Terminal To Case, t = 2s . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Terminal Screw Torque 4mm Metric Screw Size
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Diode Forward Voltage
1. Pulse width limited by maximum junction temperature.
At T
At T
C
C
= 25
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C
= 25
> 25
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
J
= 25
T
C
o
o
= 25
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
o
SYMBOL
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C, Unless Otherwise Noted
V
t
t
Q
BV
t
t
CE(SAT)
SSOA
d(OFF)I
d(OFF)I
V
E
E
E
E
GE(TH)
d(ON)I
E
d(ON)I
E
I
I
V
GES
g(ON)
CES
GEP
ON1
ON2
ON1
ON2
OFF
OFF
t
t
t
t
CES
EC
rI
fI
rI
fI
I
V
I
V
I
V
T
L = 100 µ H, V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 200 µ H
Test Circuit (Figure 24)
IGBT and Diode at T
I
V
V
R
L = 200 µ H
Test Circuit (Figure 24)
I
C
C
C
C
C
CE
CE
EC
J
GE
GE
CE
GE
GE
CE
CE
CE
G
G
= 250 µ A, V
= 40A,
= 250 µ A, V
= 40A, V
= 40A,
= 150
= 2.2 Ω
= 2.2 Ω
= 40A
= 40A
= 40A
= BV
= 0.5 BV
= 0.65 BV
=15V
= 0.65 BV
= 15V
= 15V
= ± 20V
o
TEST CONDITIONS
CES
C, R
CE
CE
CES
GE
CE
G
= 0.5 BV
CES
CES
= 2.2 Ω, V
= 600V
= V
= 0V
J
J
GE
T
T
T
T
V
V
J
= 25
= 125
, T
J
J
J
J
GE
GE
CES
= 25
= 125
= 25
= 125
C110
GEM
ISOL
CES
GES
STG
GE
C25
CM
= 15V
= 20V
o
C
o
D
o
o
C
= 15V
C
C
o
o
C
C
HGT1N40N60A4D
200A at 600V
-55 to 150
MIN
600
200
4.5
2500
600
110
300
± 20
± 30
298
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.3
1.5
1.7
45
1220
TYP
2.25
350
450
145
400
850
370
185
400
660
1.7
1.5
5.6
8.5
25
18
35
27
20
55
-
-
-
-
-
HGT1N40N60A4D Rev. B
MAX
± 250
1400
250
405
520
225
775
3.0
2.7
2.0
2.7
95
7
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
W/
N-m
N-m
o
W
V
A
A
A
V
V
V
UNITS
C
o
C
mA
µ A
nA
nC
nC
ns
ns
ns
ns
µ J
µ J
µ J
ns
ns
ns
ns
µ J
µ J
µ J
V
V
V
V
A
V
V