APTGF50DH60T1G Microsemi Power Products Group, APTGF50DH60T1G Datasheet - Page 7

• Manufacturer Part Number: APTGF50DH60T1G
• Description: IGBT NPT BRIDGE 600V 65A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50DH60T1G

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 50A
• Current - Collector (ic) (max): 65A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical diode Performance Curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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120
100
200
175
150
125
100
1.5
1.0
0.5
0.0
1.4
1.2
0.8
0.6
0.4
0.2
80
60
40
20
0.00001
75
50
25
0
1
0
0
0.0
0
1
Capacitance vs. Reverse Voltage
Forward Current vs Forward Voltage
T
V
J
R
V
=125°C
=400V
200
0.5
F
Q
0.9
0.3
0.7
0.5
0.1
0.05
, Anode to Cathode Voltage (V)
RR
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
V
vs. Current Rate Charge
R
, Reverse Voltage (V)
400
1.0
10
-diF/dt (A/µs)
0.0001
T
600
J
1.5
=125°C
T
800
100
2.0
J
=25°C
1000 1200
0.001
Rectangular Pulse Duration (Seconds)
2.5
30 A
60 A
15 A
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1000
3.0
Single Pulse
0.01
Max. Average Forward Current vs. Case Temp.
175
150
125
100
30
25
20
15
10
50
40
30
20
10
APTGF50DH60T1G
75
50
5
0
0
25
0
0
T
V
0.1
I
J
R
RRM
=125°C
=400V
Trr vs. Current Rate of Charge
200
200
50
vs. Current Rate of Charge
Case Temperature (°C)
400
400
75
-di
-diF/dt (A/µs)
F
/dt (A/µs)
600
600
100
1
60 A
800
Duty Cycle = 0.5
800
125
15 A
T
J
=175°C
T
V
J
1000 1200
R
=125°C
1000 1200
=400V
60 A
150
30 A
30 A
15 A
10
175
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