APTGF50DH60T1G Microsemi Power Products Group, APTGF50DH60T1G Datasheet - Page 6

• Manufacturer Part Number: APTGF50DH60T1G
• Description: IGBT NPT BRIDGE 600V 65A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50DH60T1G

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 50A
• Current - Collector (ic) (max): 65A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
0
Capacitance vs Collector to Emitter Voltage
0
0.05
V
0.9
0.5
0.3
0.7
0.1
CE
, Collector to Emitter Voltage (V)
10
Cres
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
0.001
Rectangular Pulse Duration (Seconds)
Coes
Cies
www.microsemi.com
50
Single Pulse
0.01
240
200
160
120
APTGF50DH60T1G
80
40
0
0
Operating Frequency vs Collector Current
0.1
switching
hard
20
I
C
, Collector Current (A)
40
ZVS
1
60
V
D = 50%
R
T
T
G
J
C
CE
= 75°C
= 125°C
= 2.7Ω
= 400V
80
ZCS
100
10
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