APTGF50DH60T1G Microsemi Power Products Group, APTGF50DH60T1G Datasheet - Page 3

• Manufacturer Part Number: APTGF50DH60T1G
• Description: IGBT NPT BRIDGE 600V 65A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50DH60T1G

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 50A
• Current - Collector (ic) (max): 65A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal and package characteristics
Temperature sensor NTC
Symbol Characteristic
Torque
Symbol
∆R
SP1 Package outline
V
R
T
B
∆B/B
Wt
T
T
ISOL
R
STG
thJC
25
25/85
C
J
25
/R
25
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Characteristic
Resistance @ 25°C
T
25
= 298.15 K
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
⎡
⎢
⎣
B
25
/
85
R
⎛
⎜ ⎜
⎝
25
T
1
25
−
T
1
⎞
⎟ ⎟
⎠
www.microsemi.com
⎤
⎥
⎦
T: Thermistor temperature
R
T
: Thermistor value at T
To heatsink
APTGF50DH60T1G
T
IGBT
Diode
C
=100°C
M4
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
5
4
Max
Max
125
150
100
0.5
1.2
4.7
80
°C/W
Unit
Unit
N.m
kΩ
°C
%
%
K
V
g
3 – 7