APTGF50DH60T1G Microsemi Power Products Group, APTGF50DH60T1G Datasheet - Page 4

• Manufacturer Part Number: APTGF50DH60T1G
• Description: IGBT NPT BRIDGE 600V 65A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50DH60T1G

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 50A
• Current - Collector (ic) (max): 65A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical IGBT Performance Curve
100
150
125
100
75
50
25
75
50
25
0
0
1.20
1.10
1.00
0.90
0.80
0
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
V
25
CE
1
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
GE
T
2
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
T
J
3
50
=25°C
J
=25°C
4
T
J
=125°C
2
5
75
6
GE
7
T
=15V)
3
100
J
=125°C
8
9
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125
10
4
APTGF50DH60T1G
100
70
60
50
40
30
20
10
18
16
14
12
10
75
50
25
0
8
6
4
2
0
0
25
0
DC Collector Current vs Case Temperature
0
250µs Pulse Test
< 0.5% Duty cycle
I
T
V
C
J
Output Characteristics (V
25
CE
= 50A
= 25°C
, Collector to Emitter Voltage (V)
50
T
C
50
, Case Temperature (°C)
1
Gate Charge (nC)
V
Gate Charge
75
75
CE
=300V
100 125 150 175 200
T
V
J
2
CE
=25°C
=120V
100
GE
=10V)
T
3
125
J
V
=125°C
CE
=480V
150
4
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