APTGF50DH60T1G Microsemi Power Products Group, APTGF50DH60T1G Datasheet - Page 2

• Manufacturer Part Number: APTGF50DH60T1G
• Description: IGBT NPT BRIDGE 600V 65A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50DH60T1G

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 50A
• Current - Collector (ic) (max): 65A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Dynamic Characteristics
Diode ratings and characteristics (CR2 & CR3)
CR1 & CR4 are IGBT protection diodes only
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
V
V
V
T
T
T
T
I
I
C
C
C
Q
Q
E
I
CE(sat)
E
GE(th)
Q
V
Q
CES
GES
T
d(off)
T
T
d(off)
T
I
d(on)
d(on)
RRM
I
t
RM
oes
sc
ies
res
off
rr
on
F
ge
gc
rr
g
r
f
r
f
F
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Short Circuit data
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
All ratings @ T
j
www.microsemi.com
= 25°C unless otherwise specified
V
V
Test Conditions
V
I
V
V
Test Conditions
V
V
f = 1MHz
V
V
I
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
V
V
I
R
V
t
Test Conditions
V
I
I
I
I
V
di/dt =200A/µs
p
C
C
C
C
C
F
F
F
F
GE
CE
G
G
G
GE
GE
GE
GE
CE
GE
Bus
GE
Bus
GE
Bus
GE
Bus
GE
≤ 10µs ; T
R
R
= 50A
= 50A
= 50A
= 50A
= 30A
= 60A
= 30A
= 30A
= 50A
=600V
= 2.7Ω
= 2.7Ω
= 2.7Ω
= 400V
= 600V
= 0V
= 25V
=15V
= V
= 20V, V
= 0V
= 15V
= 15V
= 15V
= 15V
≤15V ; V
= 300V
= 400V
= 400V
= 400V
CE
, I
j
= 125°C
C
CE
Bus
= 1mA
APTGF50DH60T1G
= 0V
= 360V
T
T
T
T
T
T
T
T
T
T
T
T
T
Tc = 80°C
j
j
j
j
j
j
j
j
j
j
j
j
j
= 25°C
= 25°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
Min
Min
Min
600
1.7
4
2200
Typ
160
480
Typ
Typ
323
200
166
100
225
1.5
120
130
1.8
2.2
2.0
2.2
0.5
25
35
30
20
40
12
42
10
21
9
1
Max
Max
Max
2.45
500
250
500
400
2.2
25
6
Unit
Unit
Unit
µA
µA
nC
nA
nC
mJ
pF
ns
ns
ns
V
A
V
V
V
A
2 – 7