2N7002BK,215 NXP Semiconductors, 2N7002BK,215 Datasheet - Page 9

• Manufacturer Part Number: 2N7002BK,215
• Description: MOSFET N-CH 60V 350MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002BK,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 370mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 350mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 Ohms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 0.83 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
8. Revision history
Table 6:
2N7002_6
Product data sheet
Document ID
2N7002_6
Modifications:
2N7002_5
2N7002_4
2N7002-03
2N7002_2
2N7002_1
Revision history
Release date
20060428
20051115
20050426
20000727
19970617
19901031
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•
•
•
Table 5
Table 5
Table 5
Figure
3, 4, 5, 6, 7, 11, and 12: modified
“Characteristics”: g
“Characteristics”: C
“Characteristics”: t
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
Rev. 06 — 28 April 2006
on
fs
iss
and t
removed
, C
oss
off
and C
typical values modified
Change notice
-
-
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HZG336
-
-
rss
values modified
Doc. number
-
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9397 750 14915
9397 750 07319
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© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
N-channel TrenchMOS FET
Supersedes
2N7002_5
2N7002_4
2N7002-03
2N7002_2
2N7002_1
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2N7002
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