2N7002BK,215 NXP Semiconductors, 2N7002BK,215 Datasheet - Page 4

• Manufacturer Part Number: 2N7002BK,215
• Description: MOSFET N-CH 60V 350MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002BK,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 370mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 350mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 Ohms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 0.83 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
5. Thermal characteristics
Table 4:
[1]
2N7002_6
Product data sheet
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
th(j-sp)
th(j-a)
Mounted on a printed-circuit board; minimum footprint; vertical in still air
Z
(K/W)
th(j-sp)
10
10
10
3
2
1
10
thermal resistance from junction to solder point
thermal resistance from junction to ambient
-5
Thermal characteristics
0.2
0.1
0.05
0.02
0.5
single pulse
10
-4
10
-3
Rev. 06 — 28 April 2006
10
Conditions
see
-2
Figure 4
10
-1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
N-channel TrenchMOS FET
P
Min
-
-
1
t
p
t
p
T
Typ
-
-
(s)
003aab351
2N7002
=
T
t
p
t
Max
150
350
10
4 of 11
Unit
K/W
K/W