2N7002BK,215 NXP Semiconductors, 2N7002BK,215 Datasheet

MOSFET N-CH 60V 350MA SOT23

2N7002BK,215

Manufacturer Part Number
2N7002BK,215
Description
MOSFET N-CH 60V 350MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.2N7002215.pdf (11 pages)

Specifications of 2N7002BK,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
370mW
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
0.6nC @ 4.5V
Vgs(th) (max) @ Id
2.1V @ 250µA
Current - Continuous Drain (id) @ 25° C
350mA
Drain To Source Voltage (vdss)
60V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 Ohm @ 500mA, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.8 Ohms
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
300 mA
Power Dissipation
0.83 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2N7002BK,215
Manufacturer:
NXP Semiconductors
Quantity:
9 500
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
2N7002BK,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Description
gate (G)
source (S)
drain (D)
Pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
2N7002
N-channel TrenchMOS FET
Rev. 06 — 28 April 2006
Logic level threshold compatible
Surface-mounted package
Logic level translator
V
R
DS
DSon
Simplified outline
60 V
5
1
SOT23
3
2
Very fast switching
TrenchMOS technology
High-speed line driver
I
P
D
tot
300 mA
0.83 W
Product data sheet
Symbol
mbb076
G
D
S

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2N7002BK,215 Summary of contents

Page 1

N-channel TrenchMOS FET Rev. 06 — 28 April 2006 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Surface-mounted package 1.3 Applications Logic ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name 2N7002 TO-236AB 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ------------------------ 100 % der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) R thermal resistance from junction to ambient th(j-a) Mounted on a printed-circuit board; minimum footprint; vertical in still air [1] ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R ...

Page 6

Philips Semiconductors (A) 0.8 0.6 0.4 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values (A) 0.8 0.6 0.4 ...

Page 7

Philips Semiconductors 3 V max GS(th) (V) typ 2 min 0.25 mA Fig 9. Gate-source threshold voltage as a function of junction temperature (A) ...

Page 8

Philips Semiconductors 7. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig 13. ...

Page 9

Philips Semiconductors 8. Revision history Table 6: Revision history Document ID Release date 2N7002_6 20060428 • Modifications: Table 5 • Table 5 • Table 5 • Figure 2N7002_5 20051115 2N7002_4 20050426 2N7002-03 20000727 2N7002_2 19970617 2N7002_1 19901031 2N7002_6 Product data ...

Page 10

Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 11

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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