2N7002BK,215 NXP Semiconductors, 2N7002BK,215 Datasheet - Page 6

• Manufacturer Part Number: 2N7002BK,215
• Description: MOSFET N-CH 60V 350MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002BK,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 370mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 350mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 Ohms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 0.83 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
2N7002_6
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
I
I
D
D
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
1
0
1
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
0
j
0
j
= 25 C
= 25 C and 150 C; V
1
2
T
j
= 150 C
2
DS
> I
10
D
4
25 C
R
V
3
DSon
GS
V
GS
V
003aab352
003aab354
(V) =
DS
(V)
(V)
4.5
3.5
5
4
4
6
Rev. 06 — 28 April 2006
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
10000
8000
6000
4000
2000
a
2.4
1.8
1.2
0.6
0
0
T
of drain current; typical values
factor as a function of junction temperature
a
-60
j
0
= 25 C
=
----------------------------- -
R
DSon 25 C
R
0.2
DSon
V
0
GS
(V) =
0.4
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
4
N-channel TrenchMOS FET
60
0.6
120
4.5
0.8
003aab353
T
2N7002
j
I
03aa28
D
( C)
(A)
10
5
180
1
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