2N7002BK,215 NXP Semiconductors, 2N7002BK,215 Datasheet - Page 2

MOSFET N-CH 60V 350MA SOT23

2N7002BK,215

Manufacturer Part Number
2N7002BK,215
Description
MOSFET N-CH 60V 350MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2N7002BK,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
370mW
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
0.6nC @ 4.5V
Vgs(th) (max) @ Id
2.1V @ 250µA
Current - Continuous Drain (id) @ 25° C
350mA
Drain To Source Voltage (vdss)
60V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 Ohm @ 500mA, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.8 Ohms
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
300 mA
Power Dissipation
0.83 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002BK,215
Manufacturer:
NXP Semiconductors
Quantity:
9 500
Part Number:
2N7002BK,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
2N7002_6
Product data sheet
Type number
2N7002
Symbol Parameter
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
GSM
tot
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
peak gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
Ordering information
Limiting values
Package
Name
TO-236AB
Description
plastic surface mounted package; 3 leads
Conditions
25 C
25 C
t
T
T
T
T
T
T
p
sp
sp
sp
sp
sp
sp
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
50 s; pulsed; duty cycle = 25 %
Rev. 06 — 28 April 2006
T
T
j
j
150 C
150 C; R
GS
GS
Figure 1
= 10 V; see
= 10 V; see
p
p
GS
10 s; see
10 s
= 20 k
Figure 2
Figure 2
Figure 3
and
3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
N-channel TrenchMOS FET
Min
-
-
-
-
-
-
-
-
-
-
65
65
2N7002
Max
60
60
300
190
1.2
0.83
+150
+150
300
1.2
30
40
Version
SOT23
2 of 11
Unit
V
V
V
V
mA
mA
A
W
mA
A
C
C

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