2N7002BK,215 NXP Semiconductors, 2N7002BK,215 Datasheet - Page 7

• Manufacturer Part Number: 2N7002BK,215
• Description: MOSFET N-CH 60V 350MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002BK,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 370mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 350mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 Ohms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 0.83 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
2N7002_6
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Source current as a function of source-drain
V
GS(th)
(V)
(A)
I
S
0.8
0.6
0.4
0.2
3
2
1
0
1
0
-60
I
junction temperature
T
voltage; typical values
D
0.2
j
= 0.25 mA; V
= 25 C and 150 C; V
0.4
0
DS
150 C
= V
max
typ
min
GS
60
0.6
GS
= 0 V
120
0.8
T
j
= 25 C
003aab101
003aab356
V
T
SD
j
( C)
(V)
180
1
Rev. 06 — 28 April 2006
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
(A)
10
10
10
10
I
10
D
10
-3
-4
-5
-6
2
1
10
T
gate-source voltage
V
as a function of drain-source voltage; typical
values
0
j
GS
-1
= 25 C; V
= 0 V; f = 1 MHz
DS
= 5 V
1
1
min
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
N-channel TrenchMOS FET
10
2
typ
V
V
GS
DS
003aab100
003aab357
2N7002
max
C
C
C
(V)
(V)
iss
oss
rss
10
3
2
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