FDMS7694 Fairchild Semiconductor, FDMS7694 Datasheet - Page 4

MOSFET N-CH 30V POWER56

FDMS7694

Manufacturer Part Number
FDMS7694
Description
MOSFET N-CH 30V POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS7694

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 13.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
1410pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.1 mOhms
Forward Transconductance Gfs (max / Min)
55 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
44 A
Power Dissipation
27 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
7 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS7694TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7694
Manufacturer:
FAIRCHILD
Quantity:
2 130
Part Number:
FDMS7694
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMS7694
Quantity:
430
FDMS7694 Rev.C1
Typical Characteristics
0.01
100
0.1
20
10
10
10
1
1
Figure 7.
0.01
0.01
8
6
4
2
0
0
I
Figure 9.
D
THIS AREA IS
LIMITED BY r
Figure 11. Forward Bias Safe
= 14 A
V
Switching Capability
DS
0.1
Gate Charge Characteristics
t
0.1
AV
, DRAIN to SOURCE VOLTAGE (V)
4
Operating Area
SINGLE PULSE
T
R
T
Unclamped Inductive
, TIME IN AVALANCHE (ms)
T
J
A
θ
Q
J
DS(on)
JA
= MAX RATED
= 25
= 125
g
, GATE CHARGE (nC)
= 125
V
o
DD
C
T
o
J
C
= 10 V
o
1
= 25
C/W
1
8
T
V
o
C
J
DD
T
= 100
J
= 15 V
= 25 °C unless otherwise noted
10
o
C
10
12
V
DD
100us
10 ms
100 ms
1 s
10 s
1ms
DC
= 20 V
100200
100
16
4
2000
1000
500
100
100
0.5
10
50
40
30
20
10
10
1
0
Figure 10.
10
0.1
25
Figure 12.
-4
Limited by Package
f = 1 MHz
V
Figure 8.
Current vs Case Temperature
GS
V
10
= 0 V
GS
V
V
-3
DS
= 4.5 V
50
GS
, DRAIN TO SOURCE VOLTAGE (V)
Power Dissipation
Maximum Continuous Drain
to Source Voltage
V
T
= 10 V
GS
C
10
Single Pulse Maximum
,
Capacitance vs Drain
CASE TEMPERATURE (
= 10 V
-2
t, PULSE WIDTH (sec)
75
1
10
-1
R
θ
JC
= 4.5
1
100
o
C/W
SINGLE PULSE
R
T
10
A
θ
JA
o
= 25
C )
= 125
125
10
www.fairchildsemi.com
o
C
C
100
C
C
oss
o
iss
rss
C/W
1000
150
30

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